tascon News

November 2018

Facebook page online

We have re-launched our Facebook page after ensuring the conformity to the new EU General Data Protection Regulation (GDPR). Please feel free to visit us at Facebook. We are looking forward seeing you! 

July 2018

Modification of Tascon Customer Care (TCC)

Tascon has modified its data exchange platform called Tascon Customer Care (TCC) in order to comply with legal requirements (DSGVO). Existing customers as well as new users will be asked once to set a new password for their TCC-project access. Please do not hesitate to contact us in case of any unforeseen difficulties while changing to the new TCC platform.

July 2016

Visit us on ALD 2016, the International Conference on Atomic Layer Deposition (ALD) in Dublin.

Atomic Layer Deposition (ALD) is used to fabricate ultrathin and conformal thin film structures for many semiconductor and thin film device applications. ALD is particularly advantageous for any advanced technology that requires control of film structure in the nanometer or sub-nanometer scale. For the characterization of thin films, techniques for surface analysis are needed that are sufficiently surface sensitive. This is true for the characterization of finished layers as well as for the study of their growth.

Low energy ion scattering (LEIS) is sensitive to the outermost atomic layer. It offers quantitative element analysis of the outermost atomic layer and information on deeper layers. It illuminates issues like layer closure, layer thickness, layer homogeneity, especially for the initial development of the layer. X-Ray Photoelectron Spectroscopy (XPS) is well suited to analyze the build up of entire film: Mixed layers, contaminations, effect of treatments. Time of Flight Secondary Ion Mass Spectrometry (ToF-SIMS) has its strength for sputter depth profiling and trace element analysis.

Meet our LEIS and surface analysis expert Dr. Michael Fartmann at the Tascon booth.

May 2016

"Innovative through reseach" cachet for Tascon

Tascon GmbH was awarded the "Innovative through reseach" cachet by the Stifterverband for its research activities in 2015. Based on the systematic R&D activities for methodological improvement of the analytical techniques LEIS, ToF-SIMS and XPS it's now possible to apply these methods for the routine characterization of accumulators and nanomaterials.    

October 2015

Presentation at AVS 2015: 30 Years of (ToF-)SIMS Analyses on Organic Materials

Birgit Hagenhoff will present a talk on "30 Years of (ToF-)SIMS Analyses of Organic Materials: from Monolayer to 3D Microarea Analysis" on this years AVS. If you are interested in this subject or if you have own organic samples that have to be analyse with modern ToF-SIMS equipment you should contact Birgit Hagenhoff right on the AVS or under tascon(at)tascon-gmbh.de for further details.

September 2015

Publication: Characterisation of Graphene layers with Low-Energy Ion Scattering (LEIS)

Dr. Rik ter Veen and Dr. Michael Fartmann of Tascon worked together with several scientific groups on the characterisation of Graphene layers with Low-Energy Ion Scattering (LEIS). The study focused on the identification of surface and intercalated impurities during the production and transfer of Graphene onto various substrates. The results of this study have been published in Langmuir, now (Link).

November 2013

New Team Member (XPS and SEM) at Frankfurt Site

We heartily welcome Mrs. Iris Schneider at our Frankfurt site. Mrs. Schneider will enlarge the XPS team starting November 4th. Additionally, Mrs. Scheider will add her broad SEM competence to our company. She therefore will be happy to also address your SEM needs. You can contact Mrs. Schneider as follows: phone: +49-6196-5619-251; email: iris.schneider@tascon-gmbh.de.

February 2013

Tascon has moved!

Tascon has moved into a new home. We now can enjoy significantly larger premises for our laboratories, offices and customer areas. We are looking forward to seeing you soon!

Tascon GmbH
Mendelstr. 17
48149 Münster
Phone: +49-(0)251-625622-100
Fax: +49-(0)251-625622-101

September 2012

Tutorial on Time-of-Flight Secondary Ion Mass Spectrometry during SIMS Europe

Time-of-Flight Secondary Ion Mass Spectrometry (ToF-SIMS) is one of the most efficient analytical techniques for the chemical characterisation of solid surfaces. Tascon GmbH will offer a tutorial on the basics and applications of ToF-SIMS in co-operation with the organisers of the SIMS Europe conference. The full-time course will take place in the lecture hall of the Physical Institute of the University Muenster on 09.09.2012 at 09:15. The seminar is designed to meet the needs of ToF-SIMS beginners. The course is free of charge for visitors of the SIMS Europe conference (conference fee: 100€). More information can be found here: SIMS Europe 2012

July 2012

Successful installation of an Ar gas cluster ion gun (gas cluster ion beam, GCIB)

Organic depth profiling, although demanded by industry for structure elucidation and failure analysis of organic surface and layer systems, has proved to be unsuccessful for decades. Now, with the use of a large cluster ions as primary ion beam (GCIB) for sputtering (e.g. Arn+, n=500…4000), the goal of organic depth profiling can be achieved for the first time.

At tascon a new GCIB has been installed recently and is now qualified for daily routine operation. We used the installation also to up-date our instrument portfolio and can now analyse samples up to 200mm in lateral dimension with the new technology.

Using Ar cluster ions e.g. the layer structure of organic based light emitting diodes (OLEDs) and photovoltaic cells can be elucidated. Further applications include currently the characterization of organic coatings (e.g. paint systems), polymers and drug release systems. Additionally, organic contaminants can now be removed from the surface without disturbing the underlying molecular information.

Are you interested in this new analytical option? If yes, do not hesitate to get in contact to us!

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